Information/AI
Tetsuo Kodera
Associate Professor
Quantum computing devicesNano quantum electronics
Biography
2007: Specially Appointed Assistant Professor, The University of Tokyo, 2009: Assistant Professor, Tokyo Institute of Technology, 2014: Associate Professor, Tokyo Institute of Technology
Expectations for WRHI
Cross-disciplinary international collaboration
| 2014 | Associate Professor, Tokyo Institute of Technology |
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| 2009 | Assistant Professor, Tokyo Institute of Technology |
| 2007 | Specially Appointed Assistant Professor, The University of Tokyo |
| 2017 | Best International Poster Presentation, The 3rd Conference and Workshop on Spin-Based Quantum Information Processing, M. Kobayashi, E. Tylaite, N. Shimatani, Y. Yamaoka, and T. Kodera 「Physically-defined p-channel silicon double quantum dots with a charge sensor」 |
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| 2020 | S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, and T. Kodera, “Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures” Appl. Phys. Lett. 117, 074001, 2020 (Editor’s pick) |
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| 2020 | N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, and T. Kodera, “Temperature dependence of hole transport properties through physically defined silicon quantum dots” Appl. Phys. Lett. 117, 094001, 2020 (Editor’s pick) |
| 2019 | R. Mizokuchi, S. Oda, T. Kodera, “Physically defined triple quantum dot systems in silicon on insulator” Appl. Phys. Lett. 114, 073104-1-4, 2019 |
| 2018 | K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, and S. Tarucha “Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift”, npj Quantum Information, 4, 54, 2018 |
| 2018 | J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha, “A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%” Nature Nanotechnology, 13, 102–106, 2018 |
| 2018 | S. Mizoguchi, N. Shimatani, M. Kobayashi, T. Makino, Y. Yamaoka and T. Kodera “Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate”, Jpn. J. Appl. Phys. 57, 04FK03-1-4, 2018 |
| 2017 | Y. Yamaoka, K. Iwasaki, S. Oda and T. Kodera “Charge sensing and spin-related transport property of p-channel silicon quantum dots” Jpn. J. Appl. Phys. 56, 04CK07-1-4, 2017 |
| 2017 | A. Kunisaki, M. Muruganathan, H. Mizuta and T. Kodera, “First-principles calculation of a negatively charged boron-vacancy center in diamond” Jpn. J. Appl. Phys. 56, 04CK02-1-4, 2017 |
| 2016 | S. Oda, G. Yamahata, K. Horibe and T. Kodera, “Coupled Quantum Dots on SOI as Highly Integrated Si Qubits” Tech. Digest Of IEEE International Electron Devices Meeting, 13.3.1-4, 2016 |
| 2016 | T. -Y. Yang, A. Andreev, Y. Yamaoka, T. Ferrus, T. Kodera, S. Oda, and D. A. Williams, “Quantum Information Processing in a Silicon-based System” Tech. Digest Of IEEE International Electron Devices Meeting, 34.2.1-4, 2016 |
| 2016 | T. Sawada, T. Kodera, and S. Oda, “Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes” Applied Physics Letters 109, 213102-1-4, 2016 |
| 2016 | Y. Yamaoka, S. Oda, and T. Kodera, “Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate” Appl. Phys. Lett. 109, 113109-1-4, 2016 |
| 2016 | K. Takeda, J. Kamioka, T. Otsuka, J. Yoneda, T. Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, S. Tarucha, “A fault-tolerant addressable spin qubit in a natural silicon quantum dot” Science Advanced, 2, 8, e1600694-1-6, 2016 |
| 2016 | T. Noguchi, M. Simanullang, Z. Xu, K. Usami, T. Kodera, S. Oda, “Synthesis of Ge/Si core/shell nanowires with suppression of branch formation” Applied Physics Express, 9 (5), 055504-1-4, 2016 |
| 2015 | S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, and M. Hatano, “Improvement of Fluorescence Intensity of Nitrogen Vacancy Centers in Self-Formed Diamond Microstructures” Appl. Phys. Lett. 107, 163102-1-4, 2015 |