The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films, Pengzhan Zhang, Kunji Chen, Zewen Lin, Hengping Dong, Wei Li, Jun Xu and Xinfan Huang, APPLIED PHYSICS LETTERS 106 231103 (2015)

a-SiNx:H-based ultra-low powerresistive random access memorywith tunable Si dangling bondconduction paths, Xiaofan Jiang, Zhongyuan Ma, Jun Xu, Kunji Chen, Ling Xu, Wei Li,Xinfan Huang，Duan Feng, Scientific Reports 5 15762（2015）

• Boosting light emission from Si-based thin film over Si and SiO2 nanowires architecture, Zhongwei Yu, Shengyi Qian, Linwei Yu, SoumyadeepMisra, Pei Zhang, Junzhuan Wang, Yi Shi, Ling Xu, Jun Xu, Kunji Chen, and Pere Roca iCabarrocas, Optics Express 23 5388 (2015)

In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates, L. Yu, M. Xu, J. Xu, Z. Xue, Z. Fan, G. Picardi, F. Fortuna, J. Wang, J. Xu, Y. Shi, K. Chen, and P. Roca iCabarrocas, Nano Letters 14 6469 (2014)

Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm, Pengzhan Zhang, Kunji Chen, Hengping Dong, Pei Zhang, Zhonghui Fang, Wei Li, Jun Xu, and Xinfan Huang, APPLIED PHYSICS LETTERS 105 011113 (2014)

Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model, Wang Y, Qian X, Chen K, Fang Z, Li W, Xu J, Applied Physics Letters 102 042103 (2013)