Mihai Adrian Ionescu | WRHI – Tokyo Tech World Research Hub Initiative

1998-2005	Assistant Professor, School of Engineering, EPFL
2005-2012	Associate Professor, School of Engineering, EPFL
2012-	Professor, School of Engineering, EPFL
2016	Professor (Specially Appointed), Institute of Innovative Research, Tokyo Institute of Technology

2015	Outstanding Achievement Award, Swiss Academy of Technical Sciences
2013	IBM Faculty Award, Engineering
2009	Andre Blondel Medal of the Society of Ellectrical and Electronics Engineering (SEE)
1994	Annual Award of the Romanian Academy of Technical Sciences, Romania
1994	EMRS Young Scientist Award, Strasbourg, France
1993	Best Paper Award, IEEE SOI Conference, USA.

2007	K Boucart, A.M. Ionescu, Double-gate tunnel FET with high-κ gate dielectric,IEEE Transactions on Electron Devices, 54 (7), 1725-1733, 2007.
2007	K Boucart, A.M. Ionescu, Length scaling of the double gate tunnel FET with a high-k gate dielectric,Solid-State Electronics, Vol. 51, 2007, pp. 1500-1507.
2012	L. De Michielis, L Lattanzio, A.M. Ionescu, Understanding the superlinear onset of tunnel-FET output characteristic,IEEE Electron Device Letters, Vol. 33, 2012, pp. 1523-1525.
2012	L. Lattanzio, L. De Michielis, A.M. Ionescu, Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation,IEEE Electron Device Letters, 33 (2), 167-169, 2012.
2011	A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches, Nature, vol. 479 (7373), 2011, pp. 329-337.